Misplaced Pages

#384615

53-477: SOA is usually presented in transistor datasheets as a graph with V CE (collector-emitter voltage) on the abscissa and I CE (collector-emitter current) on the ordinate ; the safe 'area' referring to the area under the curve. The SOA specification combines the various limitations of the device — maximum voltage, current, power, junction temperature , secondary breakdown — into one curve, allowing simplified design of protection circuitry. Often, in addition to

106-407: A nominal value. The type and source of data are usually stated on the datasheet. A datasheet is usually used for commercial or technical communication to describe the characteristics of an item or product. It can be published by the manufacturer to help people choose products or to help use the products. By contrast, a technical specification is an explicit set of requirements to be satisfied by

159-496: A 600 V constant-voltage source and were switched on for 25 microseconds. The entire 600 V was dropped across the device, and a large short-circuit current flowed. The devices successfully withstood this severe condition. This was the first demonstration of so-called "short-circuit-withstanding-capability" in IGBTs. Non-latch-up IGBT operation was ensured, for the first time, for the entire device operation range. In this sense,

212-542: A PNP bipolar junction transistor with the surface n-channel MOSFET . The whole structure comprises a four layered NPNP. The bipolar point-contact transistor was invented in December 1947 at the Bell Telephone Laboratories by John Bardeen and Walter Brattain under the direction of William Shockley . The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948. Later

265-466: A different data model per category. It typically contains: In Open Icecat , the global open catalog or open content project in which hundreds of manufacturers and thousands of e-commerce sellers participate, the data models of tens of thousands of taxonomy classes are defined, and millions of free PDSs can be found conforming these data-sheet data models. A material safety data sheet (MSDS), safety data sheet (SDS), or product safety data sheet (PSDS)

318-681: A material, product, or service. The ideal datasheet specifies characteristics in a formal structure, according to a strict taxonomy, that allows the information to be processed by a machine. Such machine readable descriptions can facilitate information retrieval, display, design, testing, interfacing, verification, system discovery, and e-commerce. Examples include Open Icecat data-sheets, transducer electronic data sheets for describing sensor characteristics, and electronic device descriptions in CANopen or descriptions in markup languages, such as SensorML . A product data sheet (PDS), like any datasheet, has

371-462: A pnp transistor is driven by a MOSFET, was first proposed by K. Yamagami and Y. Akagiri of Mitsubishi Electric in the Japanese patent S47-21739, which was filed in 1968. In 1978 J. D. Plummer and B. Scharf patented a NPNP transistor device combining MOS and bipolar capabilities for power control and switching. The development of IGBT was characterized by the efforts to completely suppress

424-622: A practical discrete vertical IGBT device was reported by Baliga at the IEEE International Electron Devices Meeting (IEDM) that year. General Electric commercialized Baliga's IGBT device the same year. Baliga was inducted into the National Inventors Hall of Fame for the invention of the IGBT. A similar paper was also submitted by J. P. Russel et al. to IEEE Electron Device Letter in 1982. The applications for

477-490: A product, machine, component (e.g., an electronic component ), material, subsystem (e.g., a power supply ), or software in sufficient detail that allows a buyer to understand what the product is and a design engineer to understand the role of the component in the overall system. Typically, a datasheet is created by the manufacturer and begins with an introductory page describing the rest of the document, followed by listings of specific characteristics, with further information on

530-517: A significantly lower forward voltage drop compared to a conventional MOSFET in higher blocking voltage rated devices, although MOSFETS exhibit much lower forward voltage at lower current densities due to the absence of a diode Vf in the IGBT's output BJT. As the blocking voltage rating of both MOSFET and IGBT devices increases, the depth of the n- drift region must increase and the doping must decrease, resulting in roughly square relationship decrease in forward conduction versus blocking voltage capability of

583-441: A switch in a single device. The IGBT is used in medium- to high-power applications like switched-mode power supplies , traction motor control and induction heating . Large IGBT modules typically consist of many devices in parallel and can have very high current-handling capabilities in the order of hundreds of amperes with blocking voltages of 6500 V . These IGBTs can control loads of hundreds of kilowatts . An IGBT features

SECTION 10

#1733085980385

636-576: Is an important component of product stewardship and occupational safety and health. These are required by agencies such as OSHA in its Hazard Communication Standard, 29 C.F.R. 1910.1200. It provides workers with ways to allow them to work in a safe manner and gives them physical data (melting point, boiling point, flash point, etc.), toxicity, health effects, first aid, reactivity, storage, disposal, protective equipment, and spill-handling procedures. The MSDSs differ from country to country, as different countries have different regulations. In some jurisdictions, it

689-564: Is compulsory for the SDS to state the chemical's risks, safety, and effect on the environment. The SDSs are a commonly used classification for logging information on chemicals, chemical compounds, and chemical mixtures. The SDSs often include the safe use of the chemical and the hazardous nature of the chemical. Anytime chemicals are used these datasheets will be found. There is a need to have an internationally recognized symbol when describing hazardous substances. Labels can include hazard symbols such as

742-421: Is designed to turn on and off rapidly, the IGBT can synthesize complex waveforms with pulse-width modulation and low-pass filters , thus it is also used in switching amplifiers in sound systems and industrial control systems . In switching applications modern devices feature pulse repetition rates well into the ultrasonic-range frequencies, which are at least ten times higher than audio frequencies handled by

795-412: Is effective but not bullet-proof. In practice, it is very difficult to design a protection circuit that will work under all conditions, and it is left up to the design engineer to weigh the likely fault conditions against the complexity and cost of the protection. Datasheet A datasheet , data sheet , or spec sheet is a document that summarizes the performance and other characteristics of

848-473: Is operating within its Vds, Id and Pd ratings. Some (usually expensive) MOSFETs are specified for operation in the linear region and include DC SOA diagrams, e.g. IXYS IXTK8N150L. Transistors require some time to turn off, due to effects such as minority carrier storage time and capacitance. While turning off, they may be damaged depending on how the load responds (especially with poorly snubbed inductive loads). The reverse bias safe operating area (or RBSOA )

901-530: Is the SOA during the brief time before turning the device into the off state—during the short time when the base current bias is reversed. As long as the collector voltage and collector current stay within the RBSOA during the entire turnoff, the transistor will be undamaged. Typically the RBSOA will be specified for a variety of turn-off conditions, such as shorting the base to the emitter, but also faster turn-off protocols where

954-403: Is widely used in consumer electronics , industrial technology , the energy sector , aerospace electronic devices, and transportation . The IGBT combines the simple gate-drive characteristics of power MOSFETs with the high-current and low-saturation-voltage capability of bipolar transistors . The IGBT combines an isolated-gate FET for the control input and a bipolar power transistor as

1007-442: The connectivity of the devices. In cases where there is relevant source code to include, it is usually attached near the end of the document or separated into another file. Datasheets are created, stored, and distributed via product information management or product data management systems. Depending on the specific purpose, a datasheet may offer an average value, a typical value, a typical range, engineering tolerances , or

1060-795: The 1980s and early 1990s were prone to failure through effects such as latchup (in which the device will not turn off as long as current is flowing) and secondary breakdown (in which a localized hotspot in the device goes into thermal runaway and burns the device out at high currents). Second-generation devices were much improved. The current third-generation IGBTs are even better, with speed rivaling power MOSFETs and excellent ruggedness and tolerance of overloads. Extremely high pulse ratings of second- and third-generation devices also make them useful for generating large power pulses in areas including particle and plasma physics , where they are starting to supersede older devices such as thyratrons and triggered spark gaps . High pulse ratings and low prices on

1113-526: The European Union standard black diagonal cross on an orange background, used to denote a harmful substance. The purpose of an SDS is not so that the general public will have a knowledge of how to read and understand it, but more so that it can be used in an occupational setting to allow workers to be able to work with it. Datasheets and pages are available for specific properties of chemicals in chemical elements data references : example, melting points of

SECTION 20

#1733085980385

1166-464: The base-emitter voltage bias is reversed. The RBSOA shows distinct dependencies compared to the normal SOA. For example in IGBTs the high-current, high-voltage corner of the RBSOA is cut out when the collector voltage increases too quickly. Since the RBSOA is associated with a very brief turn-off process, it is not constrained by the continuous power dissipation limit. The ordinary safe operating area (when

1219-407: The bonding wires), maximum power dissipation and maximum voltage. This has changed in more recent devices as detailed in the next section. However, power MOSFETs have parasitic PN and BJT elements within the structure, which can cause more complex localized failure modes resembling secondary breakdown. In their early history, MOSFETs became known for their absence of secondary breakdown. This benefit

1272-422: The borders of the SOA are straight lines: SOA specifications are useful to the design engineer working on power circuits such as amplifiers and power supplies as they allow quick assessment of the limits of device performance, the design of appropriate protection circuitry, or selection of a more capable device. SOA curves are also important in the design of foldback circuits. For a device that makes use of

1325-506: The continuous rating, separate SOA curves are also plotted for short duration pulse conditions (1 ms pulse, 10 ms pulse, etc.). The safe operating area curve is a graphical representation of the power handling capability of the device under various conditions. The SOA curve takes into account the wire bond current carrying capability, transistor junction temperature, internal power dissipation and secondary breakdown limitations. Where both current and voltage are plotted on logarithmic scales ,

1378-413: The destruction of the transistor. Secondary breakdown can occur both with forward and reverse base drive. Except at low collector-emitter voltages, the secondary breakdown limit restricts the collector current more than the steady-state power dissipation of the device. Older power MOSFETs did not exhibit secondary breakdown, with their safe operating area being limited only by maximum current (the capacity of

1431-416: The device at elevated temperatures by Baliga in 1985. Successful efforts to suppress the latch-up of the parasitic thyristor and the scaling of the voltage rating of the devices at GE allowed the introduction of commercial devices in 1983, which could be used for a wide variety of applications. The electrical characteristics of GE's device, IGT D94FQ/FR4, were reported in detail by Marvin W. Smith in

1484-411: The device design concept of non-latch-up IGBTs in 1984. The invention is characterized by the device design setting the device saturation current below the latch-up current, which triggers the parasitic thyristor. This invention realized complete suppression of the parasitic thyristor action, for the first time, because the maximal collector current was limited by the saturation current and never exceeded

1537-476: The device is in the on state) may be referred to as the Forward bias safe operating area (or FBSOA ) when it is possible to confuse it with the RBSOA. The most common form of SOA protection used with bipolar junction transistors senses the collector-emitter current with a low-value series resistor. The voltage across this resistor is applied to a small auxiliary transistor that progressively 'steals' base current from

1590-441: The device were initially regarded by the power electronics community to be severely restricted by its slow switching speed and latch-up of the parasitic thyristor structure inherent within the device. However, it was demonstrated by Baliga and also by A. M. Goodman et al. in 1983 that the switching speed could be adjusted over a broad range by using electron irradiation . This was followed by demonstration of operation of

1643-419: The device when used as an analog audio amplifier. As of 2010 , the IGBT was the second most widely used power transistor, after the power MOSFET . An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET , except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor . This additional p+ region creates a cascade connection of

Safe operating area - Misplaced Pages Continue

1696-433: The device. By injecting minority carriers (holes) from the collector p+ region into the n- drift region during forward conduction, the resistance of the n- drift region is considerably reduced. However, this resultant reduction in on-state forward voltage comes with several penalties: In general, high voltage, high current and lower frequencies favor the IGBT while low voltage, medium current and high switching frequencies are

1749-461: The domain of the MOSFET. Circuits with IGBTs can be developed and modeled with various circuit simulating computer programs such as SPICE , Saber , and other programs. To simulate an IGBT circuit, the device (and other devices in the circuit) must have a model which predicts or simulates the device's response to various voltages and currents on their electrical terminals. For more precise simulations

1802-480: The effect of temperature on various parts of the IGBT may be included with the simulation. Two common methods of modeling are available: device physics -based model, equivalent circuits or macromodels. SPICE simulates IGBTs using a macromodel that combines an ensemble of components like FETs and BJTs in a Darlington configuration . An alternative physics-based model is the Hefner model, introduced by Allen Hefner of

1855-485: The elements (data page) . Specific materials have technical data in individual sheets such as ethanol : this includes subjects such as structure and properties, thermodynamic properties, spectral data, vapor pressure, etc. Other chemical datasheets are available from individual producers of chemicals, often on their web pages. Datasheets for automobiles may be described under several names such as features, specs, engineering data, technical summary, etc. They help communicate

1908-401: The entire device operation range. It is used in switching power supplies in high-power applications: variable-frequency drives (VFDs) for motor control in electric cars , trains, variable-speed refrigerators, and air conditioners, as well as lamp ballasts, arc-welding machines, photovoltaic and hybrid inverters, uninterruptible power supply systems (UPS), and induction stoves . Since it

1961-407: The gate-source voltage tends to be very close to the threshold voltage. Unfortunately the threshold voltage decreases as temperature increases, so that if there are any slight temperature variations across the chip, then the hotter regions will tend to carry more current than the cooler regions when Vgs is very close to Vth. This can lead to thermal runaway and the destruction of the MOSFET even when it

2014-434: The latch-up current by controlling/reducing the saturation current of the inherent MOSFET. This was the concept of non-latch-up IGBT. "Becke’s device" was made possible by the non-latch-up IGBT. The IGBT is characterized by its ability to simultaneously handle a high voltage and a large current. The product of the voltage and the current density that the IGBT can handle reached more than 5 × 10  W/cm , which far exceeded

2067-410: The latch-up current. In the early development stage of IGBT, all the researchers tried to increase the latch-up current itself in order to suppress the latch-up of the parasitic thyristor. However, all these efforts failed because IGBT could conduct enormously large current. Successful suppression of the latch-up was made possible by limiting the maximal collector current, which IGBT could conduct, below

2120-401: The latch-up of the parasitic thyristor. Complete suppression of the parasitic thyristor action and the resultant non-latch-up IGBT operation for the entire device operation range was achieved by A. Nakagawa et al. in 1984. The non-latch-up design concept was filed for US patents. To test the lack of latch-up, the prototype 1200 V IGBTs were directly connected without any loads across

2173-420: The non-latch-up IGBT proposed by Hans W. Becke and Carl F. Wheatley was realized by A. Nakagawa et al. in 1984. Products of non-latch-up IGBTs were first commercialized by Toshiba in 1985. This was the real birth of the present IGBT. Once the non-latch-up capability was achieved in IGBTs, it was found that IGBTs exhibited very rugged and a very large safe operating area . It was demonstrated that

Safe operating area - Misplaced Pages Continue

2226-420: The non-latch-up IGBT was established in 1984 by solving the problem of so-called "latch-up", which is the main cause of device destruction or device failure. Before that, the developed devices were very weak and were easily destroyed by "latch-up". Practical devices capable of operating over an extended current range were first reported by B. Jayant Baliga et al. in 1982. The first experimental demonstration of

2279-421: The power device as it passes excess collector current. Another style of protection is to measure the temperature of the outside of the transistor, as an estimate of junction temperature, and reduce drive to the device or switch it off if the temperature is too high. If multiple transistors are used in parallel, only a few need to be monitored for case temperature to protect all parallel devices. This approach

2332-459: The proceedings of PCI April 1984. Smith showed in Fig. 12 of the proceedings that turn-off above 10 amperes for gate resistance of 5 kΩ and above 5 amperes for gate resistance of 1 kΩ was limited by switching safe operating area although IGT D94FQ/FR4 was able to conduct 40 amperes of collector current. Smith also stated that the switching safe operating area was limited by

2385-413: The product of the operating current density and the collector voltage exceeded the theoretical limit of bipolar transistors, 2 × 10  W/cm and reached 5 × 10  W/cm . The insulating material is typically made of solid polymers, which have issues with degradation. There are developments that use an ion gel to improve manufacturing and reduce the voltage required. The first-generation IGBTs of

2438-403: The secondary breakdown effect see Avalanche transistor Secondary breakdown is a failure mode in bipolar power transistors. In a power transistor with a large junction area, under certain conditions of current and voltage, the current concentrates in a small spot of the base-emitter junction. This causes local heating, progressing into a short between collector and emitter. This often leads to

2491-431: The similar thyristor was proposed by William Shockley in 1950 and developed in 1956 by power engineers at General Electric (GE). The metal–oxide–semiconductor field-effect transistor (MOSFET) was also invented at Bell Labs. In 1957 Frosch and Derick published their work on building the first silicon dioxide transistors, including a NPNP transistor, the same structure as the IGBT. The basic IGBT mode of operation, where

2544-513: The surplus market also make them attractive to the high-voltage hobbyists for controlling large amounts of power to drive devices such as solid-state Tesla coils and coilguns . As of 2010 , the IGBT is the second most widely used power transistor , after the power MOSFET. The IGBT accounts for 27% of the power transistor market, second only to the power MOSFET (53%), and ahead of the RF amplifier (11%) and bipolar junction transistor (9%). The IGBT

2597-435: The technical information about a car to potential buyers and are useful for comparisons with similar cars. They might include: critical inside and outside dimensions, weight, fuel efficiency, engine and drive train, towing capability, safety features and options, warranty, etc. IGBT An insulated-gate bipolar transistor ( IGBT ) is a three-terminal power semiconductor device primarily forming an electronic switch. It

2650-530: The thyristor operation or the latch-up in the four-layer device because the latch-up caused the fatal device failure. IGBTs had, thus, been established when the complete suppression of the latch-up of the parasitic thyristor was achieved. Later, Hans W. Becke and Carl F. Wheatley developed a similar device claiming non-latch-up. They patented the device in 1980, referring to it as "power MOSFET with an anode region" for which "no thyristor action occurs under any device operating conditions". A. Nakagawa et al. invented

2703-413: The value, 2 × 10  W/cm , of existing power devices such as bipolar transistors and power MOSFETs. This is a consequence of the large safe operating area of the IGBT. The IGBT is the most rugged and the strongest power device yet developed, affording ease of use and so displacing bipolar transistors and even gate turn-off thyristors (GTOs). This excellent feature of the IGBT had suddenly emerged when

SECTION 50

#1733085980385

2756-406: Was developed to combine high efficiency with fast switching. It consists of four alternating layers (NPNP) that are controlled by a metal–oxide–semiconductor (MOS) gate structure. Although the structure of the IGBT is topologically similar to a thyristor with a "MOS" gate ( MOS-gate thyristor ), the thyristor action is completely suppressed, and only the transistor action is permitted in

2809-494: Was due to the fact that ON-resistance increases with increasing temperature, so that part of the MOSFET which is running hotter (e.g. due to irregularities in the die-attachment, etc.) will carry a lower current density, tending to even out any temperature variation and prevent hot spots. Recently, MOSFETs with very high transconductance, optimised for switching operation, have become available. When operated in linear mode, especially at high drain-source voltages and low drain currents,

#384615