5-566: CSMT may stand for: MOS composite static induction thyristor Chhatrapati Shivaji Terminus , officially Chhatrapati Shivaji Maharaj Terminus, in Bombay, India Chhatrapati Shahu Maharaj Terminus , in Kolhapur, India Topics referred to by the same term [REDACTED] This disambiguation page lists articles associated with the title CSMT . If an internal link led you here, you may wish to change
10-514: Is a combination of a MOS transistor connected in cascode relation to the SI-thyristor . The SI thyristor (SITh) unit has a gate to which a source of MOS transistor is connected through a voltage regulation element. The low conduction loss and rugged structure MCS make it more favorable than conversional IGBT transistors . In the blocking state nearly the complete voltage drops at the SITh. Thus
15-501: The MOSFET is not exposed to high field stress. For fast switching the MOSFET with only 30–50 V blocking voltage is able. In IGBT, charge carrier concentration at emitter side in n-base layer is low as holes injected from collector easily pass to emitter electrode through p-base layer. Thus the wide-base pnp transistor operates by virtue of its current gain characteristics causing the rise collector-emitter saturation voltage. In an MCS
20-447: The link to point directly to the intended article. Retrieved from " https://en.wikipedia.org/w/index.php?title=CSMT&oldid=1068816493 " Category : Disambiguation pages Hidden categories: Short description is different from Wikidata All article disambiguation pages All disambiguation pages MOS composite static induction thyristor MOS composite static induction thyristor ( CSMT or MCS )
25-404: The positive difference between the voltage of regulation element and conduction voltage drop of MOSFET is applied to location between the collector region and emitter region of the pnp transistor. Hole concentration is accumulated at emitter side in n-base layer because of impossibility of the hole flow through forward bias collector-base junction of the pnp transistor. Carrier distribution in n-base
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